{"title":"sram中斑点缺陷的实验分析:现实故障模型和测试","authors":"S. Hamdioui, A. V. Goor","doi":"10.1109/ATS.2000.893615","DOIUrl":null,"url":null,"abstract":"In this paper a complete analysis of spot defects in industrial SRAMs will be presented. All possible defects are simulated, and the resulting electrical faults are transformed into functional fault models. The existence of the usually used theoretical memory fault models will be verified and new ones will be presented. Finally, a new march test detecting all realistic faults, with a test length of 14n, will be introduced, and its fault coverage is compared with other known tests.","PeriodicalId":403864,"journal":{"name":"Proceedings of the Ninth Asian Test Symposium","volume":"442 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"127","resultStr":"{\"title\":\"An experimental analysis of spot defects in SRAMs: realistic fault models and tests\",\"authors\":\"S. Hamdioui, A. V. Goor\",\"doi\":\"10.1109/ATS.2000.893615\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper a complete analysis of spot defects in industrial SRAMs will be presented. All possible defects are simulated, and the resulting electrical faults are transformed into functional fault models. The existence of the usually used theoretical memory fault models will be verified and new ones will be presented. Finally, a new march test detecting all realistic faults, with a test length of 14n, will be introduced, and its fault coverage is compared with other known tests.\",\"PeriodicalId\":403864,\"journal\":{\"name\":\"Proceedings of the Ninth Asian Test Symposium\",\"volume\":\"442 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-12-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"127\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Ninth Asian Test Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ATS.2000.893615\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Ninth Asian Test Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ATS.2000.893615","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An experimental analysis of spot defects in SRAMs: realistic fault models and tests
In this paper a complete analysis of spot defects in industrial SRAMs will be presented. All possible defects are simulated, and the resulting electrical faults are transformed into functional fault models. The existence of the usually used theoretical memory fault models will be verified and new ones will be presented. Finally, a new march test detecting all realistic faults, with a test length of 14n, will be introduced, and its fault coverage is compared with other known tests.
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