先进的FDSOI设计:7nm及以上节点的u通道器件

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2017-10-01 DOI:10.1109/S3S.2017.8308747

R. Muralidhar, R. Dennard, T. Ando, I. Lauer, T. Hook

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引用次数: 0

摘要

平面超薄体盒(UTBB1-3)全耗尽绝缘体上硅(FDSOI)器件在未来的低成本节能应用中具有许多优势。然而，扩展到超薄FDSOI器件的工艺步骤可能难以控制，并且外在电阻会阻碍任何性能改进。在本文中，我们提出了一种新的平面u通道UTBB FDSOI器件，可以缓解这些问题。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Advanced FDSOI design: The U-channel device for 7nm node and beyond

Planar ultra-thin body and box (UTBB1–3) fully depleted silicon on insulator (FDSOI) devices have many advantages for future low-cost energy-efficient applications. However, process steps for scaling to ultra-thin FDSOI devices can be difficult to control, and extrinsic resistance can hinder any performance improvement. In this paper, we present a novel planar U-channel UTBB FDSOI device that can alleviate these problems.

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来源期刊

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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