基于绝缘体上硅mosfet界面耦合效应的新型光电探测器

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2017-10-01 DOI:10.1109/S3S.2017.8309231

J. Deng, J. Shao, B. Lu, Y. Chen, A. Zaslavsky, S. Cristoloveanu, M. Bawedin, J. Wan

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引用次数: 3

摘要

我们报告了一种新型的cmos兼容光电探测器，具有记录响应率，建立在绝缘体上的硅(SOI)衬底上。其工作机理是基于SOI MOSFET中的界面耦合效应，通过TCAD仿真和使用简化工艺流程制作的原型器件的实验测量证实了这一点。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A novel photodetector based on the interface coupling effect in silicon-on-insulator MOSFETs

We report a novel CMOS-compatible photodetector with record responsivity built on a silicon-on-insulator (SOI) substrate. The operating mechanism is based on in the interface coupling effect in the SOI MOSFET, as confirmed by both TCAD simulations and experimental measurements on a prototype device fabricated using a simplified process flow.

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来源期刊

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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