{"title":"双栅CMOS中原位氮掺杂多晶硅的快速热化学气相沉积","authors":"S. C. Sun, L. S. Wang, F. Yeh, Chi-Chun Chen","doi":"10.1109/VLSIT.1995.520887","DOIUrl":null,"url":null,"abstract":"A novel gate structure with excellent electrical properties and reliability has been fabricated by in-situ rapid thermal multiprocessing. Gate oxide was grown first by low pressure rapid thermal oxidation in N/sub 2/O, followed by sequential rapid thermal chemical vapor deposition (RTCVD) of an ultrathin layer (6 nm) of nitrogen-doped polysilicon and then undoped polysilicon. Results show the suppression of boron penetration and high device reliability.","PeriodicalId":328379,"journal":{"name":"1995 Symposium on VLSI Technology. Digest of Technical Papers","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Rapid thermal chemical vapor deposition of in-situ nitrogen-doped poly-silicon for dual gate CMOS\",\"authors\":\"S. C. Sun, L. S. Wang, F. Yeh, Chi-Chun Chen\",\"doi\":\"10.1109/VLSIT.1995.520887\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel gate structure with excellent electrical properties and reliability has been fabricated by in-situ rapid thermal multiprocessing. Gate oxide was grown first by low pressure rapid thermal oxidation in N/sub 2/O, followed by sequential rapid thermal chemical vapor deposition (RTCVD) of an ultrathin layer (6 nm) of nitrogen-doped polysilicon and then undoped polysilicon. Results show the suppression of boron penetration and high device reliability.\",\"PeriodicalId\":328379,\"journal\":{\"name\":\"1995 Symposium on VLSI Technology. Digest of Technical Papers\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 Symposium on VLSI Technology. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.1995.520887\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 Symposium on VLSI Technology. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1995.520887","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Rapid thermal chemical vapor deposition of in-situ nitrogen-doped poly-silicon for dual gate CMOS
A novel gate structure with excellent electrical properties and reliability has been fabricated by in-situ rapid thermal multiprocessing. Gate oxide was grown first by low pressure rapid thermal oxidation in N/sub 2/O, followed by sequential rapid thermal chemical vapor deposition (RTCVD) of an ultrathin layer (6 nm) of nitrogen-doped polysilicon and then undoped polysilicon. Results show the suppression of boron penetration and high device reliability.
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