单壁碳纳米管通硅孔在差分信号传输中的潜在适用性

2019 12th International Workshop on the Electromagnetic Compatibility of Integrated Circuits (EMC Compo) Pub Date : 2019-10-01 DOI:10.1109/emccompo.2019.8919672

Qing-Hao Hu, Wensheng Zhao, Gaofeng Wang, Dawei Wang

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引用次数: 0

摘要

提出并研究了垂直排列碳纳米管(CNT)阵列填充差分通硅孔(dtsv)的电路模型。采用部分单元等效电路(PEEC)方法提取频率相关阻抗。基于该电路模型，对所提出的d - tsv的电性能进行了研究。

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Potential Applicability of Single-Walled Carbon Nanotube Through-Silicon Vias for Differential Signal Transmission

Circuit model for vertically aligned carbon nanotube (CNT) array-filled differential through-silicon vias (DTSVs) is presented and investigated. The frequency-dependent impedance is extracted by using partial-element equivalent-circuit (PEEC) method. Based on the circuit model, the electrical performance of the proposed D-TSVs is investigated.

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来源期刊

2019 12th International Workshop on the Electromagnetic Compatibility of Integrated Circuits (EMC Compo)

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