基于0.18μm BCD技术的n-LDMOS脱态击穿降解研究

2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2019-07-01 DOI:10.1109/IPFA47161.2019.8984858

Feng Lin, Bin Yang, Guipeng Sun, Shuxian Chen, Chunxu Li, Yu Huang, Qiong Wang, Siyang Liu

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引用次数: 1

摘要

通过TCAD仿真和硅实验研究了脱态BV的降解。降解是由于硅表面电场强度大，导通状态时还原表面场(RESURF)效应差，严重的kirk效应导致热孔陷入场板。高额定n-LDMOS离态BV和Rdson改进可以通过漂移工程优化来解决离态BV的退化问题。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Study of n-LDMOS Off-state Breakdown Degradation with 0.18μm BCD Technology

The off-state BV degradation was studied by TCAD simulations and silicon experiments. The degradation was caused by high electrical field in the silicon surface and poor reduced surface field (RESURF) effect during on-state, as the serious Kirk-effect made hot holes trap into the field plate. A high rated n-LDMOS off-state BV and Rdson improvement could be optimized by drift engineering to solve the off-state BV degradation issue.

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来源期刊

2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)

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