数字集成电路可靠性仿真的年龄感知库

M. Katoozi, E. Cannon, T. Dao, K. Aitken, S. Fischer, T. Amort, R. Brees, J. Tostenrude
{"title":"数字集成电路可靠性仿真的年龄感知库","authors":"M. Katoozi, E. Cannon, T. Dao, K. Aitken, S. Fischer, T. Amort, R. Brees, J. Tostenrude","doi":"10.1109/IRPS.2013.6531973","DOIUrl":null,"url":null,"abstract":"A general method for creating an age-aware library of cells, including the impact of multiple reliability degradation mechanisms, is presented. The underlying degradation models take into account key reliability-impacting parameters such as input slew rate, output load, signal toggle rate, signal activity factor, output buffer size and age. A framework for using this age-aware library to analyze the aging of digital Integrated Circuit (IC) timing performance using existing Electronic Design Automation (EDA) methodologies is also discussed.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"An age-aware library for reliability simulation of digital ICs\",\"authors\":\"M. Katoozi, E. Cannon, T. Dao, K. Aitken, S. Fischer, T. Amort, R. Brees, J. Tostenrude\",\"doi\":\"10.1109/IRPS.2013.6531973\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A general method for creating an age-aware library of cells, including the impact of multiple reliability degradation mechanisms, is presented. The underlying degradation models take into account key reliability-impacting parameters such as input slew rate, output load, signal toggle rate, signal activity factor, output buffer size and age. A framework for using this age-aware library to analyze the aging of digital Integrated Circuit (IC) timing performance using existing Electronic Design Automation (EDA) methodologies is also discussed.\",\"PeriodicalId\":138206,\"journal\":{\"name\":\"2013 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2013.6531973\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2013.6531973","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

提出了一种用于创建年龄感知细胞库的通用方法,包括多种可靠性退化机制的影响。底层退化模型考虑了影响可靠性的关键参数,如输入摆幅率、输出负载、信号切换率、信号活动因子、输出缓冲区大小和使用时间。本文还讨论了使用该年龄感知库使用现有的电子设计自动化(EDA)方法分析数字集成电路(IC)时序性能老化的框架。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An age-aware library for reliability simulation of digital ICs
A general method for creating an age-aware library of cells, including the impact of multiple reliability degradation mechanisms, is presented. The underlying degradation models take into account key reliability-impacting parameters such as input slew rate, output load, signal toggle rate, signal activity factor, output buffer size and age. A framework for using this age-aware library to analyze the aging of digital Integrated Circuit (IC) timing performance using existing Electronic Design Automation (EDA) methodologies is also discussed.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信