双升压泵，混合电流感测放大器，和二进制加权温度传感器调整方案1.8V 128Mb移动dram

2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302) Pub Date : 2002-06-13 DOI:10.1109/VLSIC.2002.1015108

J. Sim, H. Yoon, K. Chun, Hyun-Seok Lee, S. Hong, Soojeon Kim, Min-Soo Kim, Kyu-Chan Lee, Jei-Hwan Yoo, D.I. Seo, Sooin Cho

{"title":"双升压泵，混合电流感测放大器，和二进制加权温度传感器调整方案1.8V 128Mb移动dram","authors":"J. Sim, H. Yoon, K. Chun, Hyun-Seok Lee, S. Hong, Soojeon Kim, Min-Soo Kim, Kyu-Chan Lee, Jei-Hwan Yoo, D.I. Seo, Sooin Cho","doi":"10.1109/VLSIC.2002.1015108","DOIUrl":null,"url":null,"abstract":"A 1.8V 128Mb SDRAM is implemented for low current mobile applications with a 0.15/spl mu/m technology. The double boosting pump and hybrid current sense amplifier schemes are optimized for the low voltage regime with high pumping efficiency and stable I-to-V gain, respectively. A temperature sensor together with the binary weighted adjustment technique allow a very accurate implementation without loss in productivity.","PeriodicalId":162493,"journal":{"name":"2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Double boosting pump, hybrid current sense amplifier, and binary weighted temperature sensor adjustment schemes for 1.8V 128Mb mobile DRAMs\",\"authors\":\"J. Sim, H. Yoon, K. Chun, Hyun-Seok Lee, S. Hong, Soojeon Kim, Min-Soo Kim, Kyu-Chan Lee, Jei-Hwan Yoo, D.I. Seo, Sooin Cho\",\"doi\":\"10.1109/VLSIC.2002.1015108\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 1.8V 128Mb SDRAM is implemented for low current mobile applications with a 0.15/spl mu/m technology. The double boosting pump and hybrid current sense amplifier schemes are optimized for the low voltage regime with high pumping efficiency and stable I-to-V gain, respectively. A temperature sensor together with the binary weighted adjustment technique allow a very accurate implementation without loss in productivity.\",\"PeriodicalId\":162493,\"journal\":{\"name\":\"2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302)\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2002.1015108\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2002.1015108","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

1.8V 128Mb SDRAM采用0.15/spl mu/m技术实现低电流移动应用。对双升压泵浦和混合电流感测放大器方案进行了优化，分别具有高泵浦效率和稳定的i - v增益。温度传感器与二元加权调整技术一起允许非常精确的实施，而不会损失生产力。

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Double boosting pump, hybrid current sense amplifier, and binary weighted temperature sensor adjustment schemes for 1.8V 128Mb mobile DRAMs

A 1.8V 128Mb SDRAM is implemented for low current mobile applications with a 0.15/spl mu/m technology. The double boosting pump and hybrid current sense amplifier schemes are optimized for the low voltage regime with high pumping efficiency and stable I-to-V gain, respectively. A temperature sensor together with the binary weighted adjustment technique allow a very accurate implementation without loss in productivity.

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2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302)

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