利用脉冲序列编程改进了RRAM的多级控制

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2014-04-28 DOI:10.1109/VLSI-TSA.2014.6839673

Liang Zhao, Hong-Yu Chen, Shih-Chieh Wu, Zizhen Jiang, Yuan Shimeng, T. Hou, H. Wong, Y. Nishi

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引用次数: 12

摘要

RRAM中的多级单元(MLC)功能对于降低每比特成本具有吸引力。在丝状开关机制的基础上，我们提出了一种脉冲序列编程方案，以实现可靠和统一的MLC控制，而无需任何读验证操作。将该方案应用于3bit /cell的RRAM器件，电阻分布均匀性可提高80%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Improved multi-level control of RRAM using pulse-train programming

Multi-level cell (MLC) capability in RRAM is attractive for reducing the cost per bit. Based on the filamentary switching mechanisms, we propose a pulse-train programming scheme to achieve reliable and uniform MLC controls without the need of any read-verification operation. By applying the novel scheme to a 3 bit/cell RRAM device, the uniformity of resistance distribution can be improved up to 80%.

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Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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