超薄栅极氧化物击穿模式及其演变的新见解

2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517) Pub Date : 1900-01-01 DOI:10.1109/VTSA.2001.934477

H. Lin, D. Lee, C. Lee, T. Chao, T. Huang, T. Wang

{"title":"超薄栅极氧化物击穿模式及其演变的新见解","authors":"H. Lin, D. Lee, C. Lee, T. Chao, T. Huang, T. Wang","doi":"10.1109/VTSA.2001.934477","DOIUrl":null,"url":null,"abstract":"By carefully analyzing post-breakdown current-voltage characteristics of MOS devices, it was found that the soft-breakdown mode typically induced in devices with oxide thinner than 3 nm is quite different from that with oxide thicker than 3 nm. Based on our findings, a unified model is proposed to explain the evolution of different breakdown modes. Impacts of each breakdown on the device's switching behavior are also discussed.","PeriodicalId":388391,"journal":{"name":"2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"New insights into breakdown modes and their evolution in ultra-thin gate oxide\",\"authors\":\"H. Lin, D. Lee, C. Lee, T. Chao, T. Huang, T. Wang\",\"doi\":\"10.1109/VTSA.2001.934477\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"By carefully analyzing post-breakdown current-voltage characteristics of MOS devices, it was found that the soft-breakdown mode typically induced in devices with oxide thinner than 3 nm is quite different from that with oxide thicker than 3 nm. Based on our findings, a unified model is proposed to explain the evolution of different breakdown modes. Impacts of each breakdown on the device's switching behavior are also discussed.\",\"PeriodicalId\":388391,\"journal\":{\"name\":\"2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517)\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTSA.2001.934477\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.2001.934477","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 11

摘要

通过仔细分析MOS器件击穿后的电流-电压特性，发现薄于3nm的氧化物器件通常诱导的软击穿模式与厚于3nm的氧化物器件有很大的不同。在此基础上，提出了一个统一的模型来解释不同击穿模式的演化。还讨论了每次击穿对器件开关行为的影响。

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New insights into breakdown modes and their evolution in ultra-thin gate oxide

By carefully analyzing post-breakdown current-voltage characteristics of MOS devices, it was found that the soft-breakdown mode typically induced in devices with oxide thinner than 3 nm is quite different from that with oxide thicker than 3 nm. Based on our findings, a unified model is proposed to explain the evolution of different breakdown modes. Impacts of each breakdown on the device's switching behavior are also discussed.

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2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517)

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