一种用于2千伏功率集成电路工作的新型边缘结构

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI:10.1109/ISPSD.1994.583789

R. Zambrano, G. Cacciola, S. Leonardi

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摘要

介绍了一种用于2千伏功率IC操作的新边缘结构，其特点是在两个epilayers上定义低浓度环，以增加最终结深度。通过计算机模拟来评估结构的生存能力，随后进行了改变植入剂量的实验。在UHV和VHV晶圆上测量了高达2000和1200伏的击穿电压，用于大范围的植入剂量，显示出良好的过程纬度。已经制作了具有新结构的生产装置，并给出了离线SMPS的初步结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A new edge structure for 2 KVolt power IC operation

A new edge structure for 2 KVolt Power IC operation is introduced which features low concentration rings defined on two epilayers to increase the final junction depth. Computer simulations performed to assess the structure viability have been followed by experiments varying the implant dose. Breakdown voltages up to 2000 and 1200 Volts have been measured on UHV and VHV wafers for a wide range of implanted doses demonstrating good process latitude. Production devices featuring the new structure have been fabricated, preliminary results on an off-line SMPS are presented.

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Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics

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