采用Sic-Mosfet开关的背对背多电平升压降压变换器高压脉冲发生器的设计

2020 IEEE 15th International Conference of System of Systems Engineering (SoSE) Pub Date : 2020-06-01 DOI:10.1109/SoSE50414.2020.9130559

K. Tehrani, Mathieu Weber, I. Rasoanarivo

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引用次数: 3

摘要

本文介绍了一种基于硅基mosfet开关的高压脉冲发生器。该发生器必须为高频应用(>100KHZ)提供幅度大于或等于1KV的脉冲爆发。该设计是由两个背靠背转换器开发的。该原型的第一部分是基于三电平升压变换器，第二部分是基于三电平降压变换器。该原型机可用于不同的工业应用，如:医疗或物理和化学领域。在本文中，我们首先给出了这种设计的结构，然后用仿真和实验结果验证了这种拓扑结构。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design Of High Voltage Pulse Generator With Back To Back Multilevel Boost Buck Converters Using Sic-Mosfet Switches

This paper presents a high voltage pulse generator using SiC-Mosfets switches. This generator has to provide a pulse burst for high frequency applications (>100KHZ) with an amplitude greater than or equal to 1KV. This design is developed by two back to back converters. First part of this prototype is based on a threelevel boost converter and second part is based on a three-level buck converter. This protype can be used in different industrial applications such as: medical treatment or physical and chemical fields. In this paper, first, we present the structure of this design then we validate this a proposed topology with simulation and experimental results.

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2020 IEEE 15th International Conference of System of Systems Engineering (SoSE)

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