Nanoprober image based localization techniques for SOI technology

As we continue scaling down in technology, non-visible defects are dominating our defect paretos and nanoprobing has become an essential part of Failure Analysis [1]. However, nanoprobing can become highly time consuming if the defect is not localized to a few devices. Traditional localization techniques like SEM based Voltage Contrast and AFM based Current Imaging have been employed to localize defects on Bulk Semiconductor Technology. These techniques cannot be used as is for localizing defects on SOI technology as there is no direct path to ground from the SOI to the sample chuck. This paper will discuss two different Atomic Force Probe (AFP) based localization techniques that have been successfully implemented to localize defects on SOI Technology. The first technique is Capacitance based top-down Scanning Capacitance Localization also known and Nanoprobe Capacitance Voltage Spectroscopy (NCVS). The second technique is a Current Imaging based Pico-Current Localization Technique (also known as Conductive AFM) that has been modified to localize defects on SOI