I. Thayne, M. Holland, Y. Chen, W. Li, A. Paulsen, S. Beaumont, P. Bhattacharya
{"title":"80 nm-200 nm栅极长度Al/sub 0.25/GaAs/GaAs/Al/sub 0.25/GaAs、Al/sub 0.3/GaAs/In/sub 0.15/GaAs/GaAs和In/sub 0.52/AlAs/In/sub 0.65/GaAs/InP HEMTs的比较","authors":"I. Thayne, M. Holland, Y. Chen, W. Li, A. Paulsen, S. Beaumont, P. Bhattacharya","doi":"10.1109/IEDM.1993.347364","DOIUrl":null,"url":null,"abstract":"This paper describes a comparative analysis of the high frequency performance of 80-200 nm gate length high electron mobility transistors (HEMTs) fabricated on three material structures having different 2 dimensional electron gas (2DEG) transport properties. The higher effective velocity of carriers in the channel of pseudomorphic InGaAs/InP devices resulted in 80 nm gate length devices with f/sub T/'s of 275 GHz. Device output resistance was found to be strongly material dependent. At the shortest gate lengths, the device f/sub max/ was limited primarily by the gate resistance. Additionally however, f/sub max/ was significantly affected by both the contribution of the gate drain capacitance to the total gate capacitance and the magnitude of the output resistance.<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Comparison of 80 nm-200 nm gate length Al/sub 0.25/GaAs/GaAs/Al/sub 0.25/GaAs, Al/sub 0.3/GaAs/In/sub 0.15/GaAs/GaAs and In/sub 0.52/AlAs/In/sub 0.65/GaAs/InP HEMTs\",\"authors\":\"I. Thayne, M. Holland, Y. Chen, W. Li, A. Paulsen, S. Beaumont, P. Bhattacharya\",\"doi\":\"10.1109/IEDM.1993.347364\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a comparative analysis of the high frequency performance of 80-200 nm gate length high electron mobility transistors (HEMTs) fabricated on three material structures having different 2 dimensional electron gas (2DEG) transport properties. The higher effective velocity of carriers in the channel of pseudomorphic InGaAs/InP devices resulted in 80 nm gate length devices with f/sub T/'s of 275 GHz. Device output resistance was found to be strongly material dependent. At the shortest gate lengths, the device f/sub max/ was limited primarily by the gate resistance. Additionally however, f/sub max/ was significantly affected by both the contribution of the gate drain capacitance to the total gate capacitance and the magnitude of the output resistance.<<ETX>>\",\"PeriodicalId\":346650,\"journal\":{\"name\":\"Proceedings of IEEE International Electron Devices Meeting\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1993.347364\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1993.347364","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comparison of 80 nm-200 nm gate length Al/sub 0.25/GaAs/GaAs/Al/sub 0.25/GaAs, Al/sub 0.3/GaAs/In/sub 0.15/GaAs/GaAs and In/sub 0.52/AlAs/In/sub 0.65/GaAs/InP HEMTs
This paper describes a comparative analysis of the high frequency performance of 80-200 nm gate length high electron mobility transistors (HEMTs) fabricated on three material structures having different 2 dimensional electron gas (2DEG) transport properties. The higher effective velocity of carriers in the channel of pseudomorphic InGaAs/InP devices resulted in 80 nm gate length devices with f/sub T/'s of 275 GHz. Device output resistance was found to be strongly material dependent. At the shortest gate lengths, the device f/sub max/ was limited primarily by the gate resistance. Additionally however, f/sub max/ was significantly affected by both the contribution of the gate drain capacitance to the total gate capacitance and the magnitude of the output resistance.<>
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