三维CMOS-MEMS叠层与TSV-less面对面直接金属键合

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI:10.1109/VLSIT.2014.6894410

S. L. Chua, A. Razzaq, K. H. Wee, K. Li, H. Yu, C. Tan

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引用次数: 2

摘要

CMOS读出电路采用面对面(F2F)直接金属键合堆叠在MEMS加速度计上。F2F键合提供更小的外形尺寸、延迟和功耗。CMOS芯片充当一个活动帽，封装并提供到MEMS芯片的互连路由。在300°C/10min/50N的温度下实现了金属(Al-Au)的键合。粘结质量满足剪切试验和氦泄漏试验要求。堆叠的CMOS/MEMS芯片被验证是功能性的，并能承受500g的冲击测试。

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3D CMOS-MEMS stacking with TSV-less and face-to-face direct metal bonding

CMOS readout circuit is stacked on MEMS accelerometer using face-to-face (F2F) direct metal bonding. F2F bonding provides smaller form factor, latency, and power consumption. The CMOS chip acts as an active cap that encapsulates and provides interconnect routing to the MEMS chip. Metal bonding (Al-Au) was achieved at 300°C/10min/50N. The bond quality meets the requirements during shear and helium leak tests. The stacked CMOS/MEMS chip is verified to be functional and sustains shock test of 500g.

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来源期刊

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers

CiteScore

3.40

自引率

0.00%

发文量