利用平面fet、finfet和应变松弛缓冲层finfet对Si1−xGex沟道中的应变和Ge含量进行了比较研究

2017 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2017-12-01 DOI:10.1109/IEDM.2017.8268509

C. Lee, S. Mochizuki, R. Southwick, J. Li, Xin He Miao, R. Bao, T. Ando, R. Galatage, S. Siddiqui, C. Labelle, A. Knorr, J. Stathis, D. Guo, V. Narayanan, B. Haran, H. Jagannathan

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引用次数: 18

摘要

在应变松弛缓冲虚拟衬底上制备应变Si1−xGex沟道pfinfet和平面pfinfet，比较研究应变和Ge含量对Si1−xGex沟道的电学影响。通过比较SRB上的Si1−xGex pfet与Si衬底上的Si1−xGex pfet的晶体管电学特性，我们成功地解耦合了Si1−xGex通道中应变和Ge含量对器件性能的影响，如栅极堆叠质量、可靠性和载流子输运。基于这些认识，提出了优化表面取向的SRB上的双通道Si/Si1−xGex finfet，以进一步提高器件性能。

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A comparative study of strain and Ge content in Si1−xGex channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs

Strained Si1−x Gex channel pFinFETs and planar pFETs are fabricated on a strain relaxed buffer virtual substrate to comparatively study the electrical impact of strain and Ge content in the Si1−xGex channel. By comparing the transistor electrical properties of Si1−xGex pFETs on SRB with Si1−xGex pFETs on Si substrate, we successfully decouple the influence of strain and Ge content in the Si1−x Gex channel on device performance such as gate stack quality, reliability, and carrier transport. Based on these understandings, dual channel Si/Si1−xGex FinFETs on the SRB with the optimized surface orientation is proposed to further improve the device performance.

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2017 IEEE International Electron Devices Meeting (IEDM)

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