慢光条件下干涉光刻制备二维光子晶体波导结构的面外损耗建模

S. Lis, W. Dawidowski, M. Wielichowski, K. Ptasínski, S. Patela
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引用次数: 0

摘要

本文给出了二维绝缘体上硅(SOI)光子晶体(PhC)平板在慢光状态下面外辐射损耗的三维时域有限差分(FDTD)计算结果。在二维PhC板结构中,周期性引起波导模式向辐射模式的散射。基于二维PhCs的光学传感器工作在慢光状态下,为了使光的传播路径更长,需要长器件。同时,减慢光的群速度延长了信号与周围环境相互作用的时间。通过建立SOI PhC板的三维模型,研究了二维PhC板的孔深和侧壁坡度对面外散射的影响。还讨论了利用干涉光刻机制造模拟结构的可能性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modelling of out-of-plane losses in a 2D photonic crystal waveguiding structure fabricated by interference lithography in slow light regime
The results of 3D FDTD calculations of out-of-plane radiation losses in slow light regime for a 2D Silicon-On-Insulator (SOI) Photonic Crystal (PhC) slab are presented. In a 2D PhC slab structure periodicity causes a scattering out of waveguiding modes to the radiating modes. Optical sensors based on 2D PhCs working in slow light regime call for long devices in order to make the path of light propagation longer. At the same time, slowing down the group velocity of light extends signal interaction time with the investigated surroundings. By using a 3D model of an SOI PhC slab we will present the influence of the hole depth and side walls slope of a 2D PhC on the out-of-plane scattering. The possibility of utilising an interference lithograph to fabricate the modelled structure is discussed as well.
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