浮动门低压差稳压器的基本原理

A. Low, P. Hasler
{"title":"浮动门低压差稳压器的基本原理","authors":"A. Low, P. Hasler","doi":"10.1109/MWSCAS.2000.951396","DOIUrl":null,"url":null,"abstract":"This paper presents an overview of series voltage regulators, beginning with single-transistor designs and exploring the various design issues and concepts. The regulating characteristics of nFET and pFET single-transistor regulators are compared analytically and experimentally to determine an optimal starting topology. The design of these simple regulators is taken a step further by applying floating-gate techniques to improve the flexibility of the existing design and the ability to customize the regulator bias points.","PeriodicalId":437349,"journal":{"name":"Proceedings of the 43rd IEEE Midwest Symposium on Circuits and Systems (Cat.No.CH37144)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Basics of floating-gate low-dropout voltage regulators\",\"authors\":\"A. Low, P. Hasler\",\"doi\":\"10.1109/MWSCAS.2000.951396\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents an overview of series voltage regulators, beginning with single-transistor designs and exploring the various design issues and concepts. The regulating characteristics of nFET and pFET single-transistor regulators are compared analytically and experimentally to determine an optimal starting topology. The design of these simple regulators is taken a step further by applying floating-gate techniques to improve the flexibility of the existing design and the ability to customize the regulator bias points.\",\"PeriodicalId\":437349,\"journal\":{\"name\":\"Proceedings of the 43rd IEEE Midwest Symposium on Circuits and Systems (Cat.No.CH37144)\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-08-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 43rd IEEE Midwest Symposium on Circuits and Systems (Cat.No.CH37144)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSCAS.2000.951396\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 43rd IEEE Midwest Symposium on Circuits and Systems (Cat.No.CH37144)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSCAS.2000.951396","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

摘要

本文介绍了串联稳压器的概述,从单晶体管设计开始,探索各种设计问题和概念。通过分析和实验比较了fet和fet单晶体管调节器的调节特性,以确定最佳的启动拓扑结构。这些简单稳压器的设计通过应用浮动门技术进一步提高了现有设计的灵活性和自定义稳压器偏置点的能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Basics of floating-gate low-dropout voltage regulators
This paper presents an overview of series voltage regulators, beginning with single-transistor designs and exploring the various design issues and concepts. The regulating characteristics of nFET and pFET single-transistor regulators are compared analytically and experimentally to determine an optimal starting topology. The design of these simple regulators is taken a step further by applying floating-gate techniques to improve the flexibility of the existing design and the ability to customize the regulator bias points.
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