采用0.25µm CMOS技术，带有源电感的宽带2.5 GHz压控振荡器

2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009) Pub Date : 2009-12-01 DOI:10.1109/ICECS.2009.5410792

A. Medjahdi, F. Calmon

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引用次数: 0

摘要

我们设计了一个电压控制振荡器(VCO)，其差分结构包含两个有源电感单元。该紧凑电路(~ 60×75µm2)采用0.25µm MOSFET技术实现。该振荡器可在1.5 GHz至2.8 GHz的宽频段工作，可通过0.6 V至1.2 V的调谐电压进行调节。该振荡器在2.5 V电源电压下静态功耗为13 mW(仅VCO核心)，相位噪声为- 93 dBc/Hz @ 1MHz。

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Wideband 2.5 GHz VCO with active inductance in a 0.25 µm CMOS technology

We have designed a Voltage Controlled Oscillator (VCO) with a differential architecture containing two active inductance cells. This compact circuit (∼60×75 µm2) was realized in a 0.25 µm MOSFET technology. The oscillator can operate on a wide frequency band from 1.5 GHz up to 2.8 GHz adjustable by a tuning voltage between 0.6 V and 1.2 V. This oscillator has a static consumption of 13 mW (VCO core only) under 2.5 V supply voltage and presents a phase noise of −93 dBc/Hz @ 1MHz.

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来源期刊

2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009)

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