CMOS标准单元电路中的短路分析

A. Jee, F. Ferguson
{"title":"CMOS标准单元电路中的短路分析","authors":"A. Jee, F. Ferguson","doi":"10.1109/ASIC.1994.404540","DOIUrl":null,"url":null,"abstract":"In order to provide high levels of IC quality, we must be able to detect the presence of a very high percentage of the defects that may occur in circuits. Our long term goal is to address this problem by developing guidelines to design circuits to be more easily tested without requiring complex fault models or testing techniques. This paper is a first step towards this goal. This paper contains data on which shorting defects are most likely to occur in CMOS standard cell circuits and which are most likely to not be detected by standard testing methods.<<ETX>>","PeriodicalId":354289,"journal":{"name":"Proceedings Seventh Annual IEEE International ASIC Conference and Exhibit","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"An analysis of shorts in CMOS standard cell circuits\",\"authors\":\"A. Jee, F. Ferguson\",\"doi\":\"10.1109/ASIC.1994.404540\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to provide high levels of IC quality, we must be able to detect the presence of a very high percentage of the defects that may occur in circuits. Our long term goal is to address this problem by developing guidelines to design circuits to be more easily tested without requiring complex fault models or testing techniques. This paper is a first step towards this goal. This paper contains data on which shorting defects are most likely to occur in CMOS standard cell circuits and which are most likely to not be detected by standard testing methods.<<ETX>>\",\"PeriodicalId\":354289,\"journal\":{\"name\":\"Proceedings Seventh Annual IEEE International ASIC Conference and Exhibit\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings Seventh Annual IEEE International ASIC Conference and Exhibit\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASIC.1994.404540\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings Seventh Annual IEEE International ASIC Conference and Exhibit","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASIC.1994.404540","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

为了提供高水平的IC质量,我们必须能够检测电路中可能出现的非常高百分比的缺陷的存在。我们的长期目标是通过制定指导方针来解决这个问题,使电路设计更容易测试,而不需要复杂的故障模型或测试技术。本文是实现这一目标的第一步。本文包含了在CMOS标准单元电路中最可能发生的短路缺陷和最可能通过标准测试方法检测不到的短路缺陷的数据。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An analysis of shorts in CMOS standard cell circuits
In order to provide high levels of IC quality, we must be able to detect the presence of a very high percentage of the defects that may occur in circuits. Our long term goal is to address this problem by developing guidelines to design circuits to be more easily tested without requiring complex fault models or testing techniques. This paper is a first step towards this goal. This paper contains data on which shorting defects are most likely to occur in CMOS standard cell circuits and which are most likely to not be detected by standard testing methods.<>
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