Cu2ZnSnSe4太阳能电池器件的工艺变异性:电学和结构研究

G. Brammertz, M. Buffiere, Christophe Verbist, S. Oueslati, J. Bekaert, H. Elanzeery, K. Ben Messaoud, S. Sahayaraj, M. Batuk, J. Hadermann, C. Koble, M. Meuris, J. Poortmans
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引用次数: 1

摘要

采用顺序溅射金属层的H2Se硒化方法制备了效率为9.7%的Cu2ZnSnSe4/CdS/ZnO太阳能电池。尽管获得了良好的效率,但过程控制似乎很困难。在目前的贡献中,我们比较了两种器件的电学和物理特性,它们具有标称相同的制造过程,但功率转换效率分别为1%和9.7%。我们确定了低性能器件的问题是样品背面的ZnSe相的偏析。这种ZnSe似乎是在性能较低的器件中观察到的强偏置依赖光电流的原因,因为它增加了载流子收集的潜在障碍。两种名义上相同的器件行为不同的原因尚不完全清楚,但推测与溅射变异性有关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Process variability in Cu2ZnSnSe4 solar cell devices: Electrical and structural investigations
We have fabricated 9.7% efficient Cu2ZnSnSe4/CdS/ZnO solar cells by H2Se selenization of sequentially sputtered metal layers. Despite the good efficiency obtained, process control appears to be difficult. In the present contribution we compare the electrical and physical properties of two devices with nominal same fabrication procedure, but 1% and 9.7% power conversion efficiency respectively. We identify the problem of the lower performing device to be the segregation of ZnSe phases at the backside of the sample. This ZnSe seems to be the reason for the strong bias dependent photocurrent observed in the lower performing devices, as it adds a potential barrier for carrier collection. The reason for the different behavior of the two nominally same devices is not fully understood, but speculated to be related to sputtering variability.
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