一种轻型SOI灯的紧凑模型:描述、实验验证及系统应用

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1487959

E. Napoli, V. Pathirana, F. Udrea, G. Bonnet, T. Trajkovic, G. Amaratunga

{"title":"一种轻型SOI灯的紧凑模型:描述、实验验证及系统应用","authors":"E. Napoli, V. Pathirana, F. Udrea, G. Bonnet, T. Trajkovic, G. Amaratunga","doi":"10.1109/ISPSD.2005.1487959","DOIUrl":null,"url":null,"abstract":"A complete physical model for the lateral IGBT in thin silicon on insulator technology is presented for the first time. The model is oriented to circuit simulators and is implemented in Pspice. Model results are compared against experimental results and Medici numerical simulations. Numerical convergence performance of the model is verified through the simulation of a half bridge circuit and a complete flyback switch mode power supply.","PeriodicalId":154808,"journal":{"name":"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A compact model for thin SOI LIGBTs: description, experimental verification and system application\",\"authors\":\"E. Napoli, V. Pathirana, F. Udrea, G. Bonnet, T. Trajkovic, G. Amaratunga\",\"doi\":\"10.1109/ISPSD.2005.1487959\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A complete physical model for the lateral IGBT in thin silicon on insulator technology is presented for the first time. The model is oriented to circuit simulators and is implemented in Pspice. Model results are compared against experimental results and Medici numerical simulations. Numerical convergence performance of the model is verified through the simulation of a half bridge circuit and a complete flyback switch mode power supply.\",\"PeriodicalId\":154808,\"journal\":{\"name\":\"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2005.1487959\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2005.1487959","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

首次建立了薄硅绝缘体上横向IGBT的完整物理模型。该模型面向电路模拟器，并在Pspice中实现。将模型结果与实验结果和美第奇数值模拟结果进行了比较。通过对半桥电路和全反激开关电源的仿真，验证了该模型的数值收敛性能。

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A compact model for thin SOI LIGBTs: description, experimental verification and system application

A complete physical model for the lateral IGBT in thin silicon on insulator technology is presented for the first time. The model is oriented to circuit simulators and is implemented in Pspice. Model results are compared against experimental results and Medici numerical simulations. Numerical convergence performance of the model is verified through the simulation of a half bridge circuit and a complete flyback switch mode power supply.

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来源期刊

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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