基于压电AlN薄膜体声波的8ghz微波滤波器

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI:10.1109/ISAF.2002.1195889

R. Lanz, P. Muralt

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引用次数: 3

摘要

体声波(BAW)谐振器和滤波器的频率范围在7至8 GHz之间。实现了质量因数为550，耦合系数k/sup为5.5%的谐振腔。所获得的谐振器特性理论上产生3.5% 3dB带宽的滤波器，具有平坦的通道特性，插入损耗为-6 dB。从理论上研究了与使用铝或铂底电极有关的权衡。虽然铝有望产生具有更低插入损耗的滤波器，但Pt有望产生更大的带宽。

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8 GHz microwave filters based on bulk acoustic waves in piezoelectric AlN thin films

Bulk acoustic wave (BAW) resonators and filters have been fabricated in the frequency range between 7 and 8 GHz. Resonators with quality factors of 550, and coupling factors k/sup 2/ of 5.5 % have been achieved. The obtained resonator characteristics theoretically yield filters of 3.5 % 3dB bandwidths with flat channel characteristics, and insertion losses of -6 dB. The tradeoffs related to the use of aluminum or platinum bottom electrodes is investigated theoretically. While aluminum is expected to yield filters with lower insertion loss, Pt is expected to yield larger bandwidths.

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Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.

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