超低功耗射频交叉耦合压控振荡器设计在亚阈值范围内,具有高抗PVT变化的130nm CMOS技术

I. Ghorbel, F. Haddad, W. Rahajandraibe
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引用次数: 8

摘要

提出了一种超低功耗低相位噪声射频压控振荡器(VCO)的新设计和优化方法。该VCO基于在亚阈值区域工作的PMOS-NMOS交叉耦合拓扑结构。该电路采用自适应体偏置技术,对PVT (P=Process, V=Voltage, T=Temperature)变化具有较高的抗扰性。该VCO采用130nm CMOS技术,在0.6 V电压下功耗仅为63 μW。得到的调谐范围为2.32 GHz ~ 2.495 GHz,约为7.2%;因此,它可以满足许多无线通信标准,如Wi-Fi、ANT、ZigBee、IEEE 802.15.4、6LoWPAN和蓝牙。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ultra low power RF cross-coupled VCO design in the subthreshold regime with high immunity to PVT variations in 130nm CMOS technology
This paper presents a novel design and an optimization methodology of an ultra-low power and low phase noise RF voltage controlled oscillator (VCO). This VCO is based on a PMOS-NMOS cross-coupled topology operating in the subthreshold region. An adaptive body biasing technique is presented in this circuit leading to a high immunity to PVT (P=Process, V=Voltage, and T=Temperature) variations. The VCO, implemented in 130nm CMOS technology, consumes only 63 μW under 0.6 V. The obtained tuning range is about 7.2% from 2.32 GHz to 2.495 GHz; therefore, it can address many wireless communication standards such as Wi-Fi, ANT, ZigBee, IEEE 802.15.4, 6LoWPAN, and Bluetooth.
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