A. Bakerenkov, V. Pershenkov, V. Felitsyn, A. Rodin, V. Telets, V. Belyakov, A. Zhukov, N. Gluhov
{"title":"双极运算放大器输入偏置电压辐射衰减率的实验估计","authors":"A. Bakerenkov, V. Pershenkov, V. Felitsyn, A. Rodin, V. Telets, V. Belyakov, A. Zhukov, N. Gluhov","doi":"10.1109/MIEL.2019.8889637","DOIUrl":null,"url":null,"abstract":"Radiation degradation rate of input offset voltage in bipolar operational amplifiers was estimated experimentally. High degradation rate was observed in devices with high input offset voltage initial values and temperature drifts. Obtained results were discussed.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Experimental Estimation of Input Offset Voltage Radiation Degradation Rate in Bipolar Operational Amplifiers\",\"authors\":\"A. Bakerenkov, V. Pershenkov, V. Felitsyn, A. Rodin, V. Telets, V. Belyakov, A. Zhukov, N. Gluhov\",\"doi\":\"10.1109/MIEL.2019.8889637\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Radiation degradation rate of input offset voltage in bipolar operational amplifiers was estimated experimentally. High degradation rate was observed in devices with high input offset voltage initial values and temperature drifts. Obtained results were discussed.\",\"PeriodicalId\":391606,\"journal\":{\"name\":\"2019 IEEE 31st International Conference on Microelectronics (MIEL)\",\"volume\":\"68 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 31st International Conference on Microelectronics (MIEL)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIEL.2019.8889637\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2019.8889637","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Experimental Estimation of Input Offset Voltage Radiation Degradation Rate in Bipolar Operational Amplifiers
Radiation degradation rate of input offset voltage in bipolar operational amplifiers was estimated experimentally. High degradation rate was observed in devices with high input offset voltage initial values and temperature drifts. Obtained results were discussed.