高品质因数GaN/Si上无横向杂散模式SAW谐振器和延迟线

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI:10.1109/EDTM55494.2023.10102990

Guofang Yu, R. Liang, Haiming Zhao, Jun Fu, Tian-ling Ren

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引用次数: 0

摘要

本文提出了一种用于消除GaN/Si表面声波(SAW)谐振器上横向杂散模式的假手指结构。所制备的谐振腔具有较高的质量因数，有效地抑制了横向杂散模式。在谐振频率$(f_{r})$为1.9173 GHz时，最大品质因子为81777。此外，还证明了横向杂散模式与传播方向无关。带假手指的延迟线显示最小插入损耗为16.44 dB。这些结果可以为未来智能芯片实验室传感器的应用铺平道路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Transverse Spurious Mode Free SAW Resonators and Delay Line on GaN/Si with High Quality Factor

This work presents a dummy finger structure for eliminating the transverse spurious mode on the GaN/Si surface acoustic wave (SAW) resonators. The fabricated resonators have a high quality factor, and the transverse spurious mode is effectively suppressed. A maximum quality factor of 81 77 at a resonant frequency $(f_{r})$ of 1.9173 GHz is obtained. Moreover, it is shown that the transverse spurious mode is independent of the propagation directions. A delay line with the dummy finger shows a minimum insertion loss of 16.44 dB. These results could pave the way for future intelligent lab-on-chip sensor applications.

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2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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