散装InP中高场载流子输运的蒙特卡罗模型

ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425) Pub Date : 2000-11-13 DOI:10.1109/SMELEC.2000.932457

A. You, D. Ong

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引用次数: 10

摘要

建立了一种全波段蒙特卡罗模型，用于模拟散装InP中的高场载流子输运。该模型使用的实际能带结构是由局部经验伪势法生成的。模拟的电子和空穴的稳态平均漂移速度和平均能量随电场的变化与前人报道的结果一致。在我们的模型中，电子和空穴电离系数通过比文献中描述的其他全波段蒙特卡罗模型中使用的Keldysh模型更“软”的阈值拟合到400 kV/cm至900 kV/cm的电场范围内的可用实验数据。

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Monte Carlo modeling of high field carrier transport in bulk InP

A full band Monte Carlo model is developed to simulate high field carrier transport in bulk InP. The realistic energy band structure used in this model is generated from the local empirical pseudopotential method. The simulated steady-state mean drift velocity and mean energy of electrons and holes as a function of electric fields are consistent with previous reported results. In our model, the electron and hole ionization coefficients are fitted to the available experimental data in the electric field range from 400 kV/cm to 900 kV/cm by a 'softer' threshold than the Keldysh model used in other full band Monte Carlo models described in the literature.

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ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425)

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