垂直纳米板FET在6-T sram中的金属栅功函数变化分析

2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-06-01 DOI:10.23919/SNW.2017.8242297

Kyul Ko, Dokyun Son, Myounggon Kang, Hyungcheol Shin

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引用次数: 2

摘要

本文利用计算机辅助设计(TCAD)仿真技术研究了6-T SRAM中5nm节点栅极全能(GAA)垂直纳米板场效应管(NP VFET)的功函数变化(WFV)。随着WFV效应的加剧，我们研究了WFV效应对SRAM位单元中NP VFET的晶粒尺寸(GS)和通道面积的准确指导。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analysis of metal gate work-function variation for vertical nanoplate FET in 6-T SRAMs

In this work, Work-Function Variation (WFV) are studied on 5 nm node gate-all-around (GAA) Vertical Nanoplate FET (NP VFET) in 6-T SRAM using Technology computer-aided design (TCAD) simulation. As WFV effects become intensified, we investigate the WFV effects for an accurate guideline with regard to grain size (GS) and channel area of NP VFET in SRAM bit cells.

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2017 Silicon Nanoelectronics Workshop (SNW)

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