J.S. Tsai, Y. Su, J.W. Hsu, J.L. Yang, J. Shieh, S. Jang, M. Liang
{"title":"灰工艺对65/45 nm制程Cu/ELK (k=2.5)互连泄漏机理的影响","authors":"J.S. Tsai, Y. Su, J.W. Hsu, J.L. Yang, J. Shieh, S. Jang, M. Liang","doi":"10.1109/IITC.2005.1499937","DOIUrl":null,"url":null,"abstract":"This work investigates the leakage and breakdown mechanisms in a Cu damascene structure with carbon-doped CVD extra low-k material (ELK, k=2.5) as intermetal dielectric. The effects of ash processing by inductively coupled plasma (ICP) and reactive ion etching (RIE) modes were extensively characterized. Due to the dominance of Frenkel-Poole (FP) emission in the leakage mechanism between Cu lines, we extracted for the first time the effective k through leakage measurements under various ash conditions. We demonstrate that RIE ash is promising to reduce leakage current, to improve dielectric breakdown, and to retain effective k for Cu/ELK applications. Finally, the mechanisms of ELK damages by ICP and RIE ash are explained.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Effect of ash process on leakage mechanism of Cu/ELK (k=2.5) interconnect for 65/45 nm generation\",\"authors\":\"J.S. Tsai, Y. Su, J.W. Hsu, J.L. Yang, J. Shieh, S. Jang, M. Liang\",\"doi\":\"10.1109/IITC.2005.1499937\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work investigates the leakage and breakdown mechanisms in a Cu damascene structure with carbon-doped CVD extra low-k material (ELK, k=2.5) as intermetal dielectric. The effects of ash processing by inductively coupled plasma (ICP) and reactive ion etching (RIE) modes were extensively characterized. Due to the dominance of Frenkel-Poole (FP) emission in the leakage mechanism between Cu lines, we extracted for the first time the effective k through leakage measurements under various ash conditions. We demonstrate that RIE ash is promising to reduce leakage current, to improve dielectric breakdown, and to retain effective k for Cu/ELK applications. Finally, the mechanisms of ELK damages by ICP and RIE ash are explained.\",\"PeriodicalId\":156268,\"journal\":{\"name\":\"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2005.1499937\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2005.1499937","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of ash process on leakage mechanism of Cu/ELK (k=2.5) interconnect for 65/45 nm generation
This work investigates the leakage and breakdown mechanisms in a Cu damascene structure with carbon-doped CVD extra low-k material (ELK, k=2.5) as intermetal dielectric. The effects of ash processing by inductively coupled plasma (ICP) and reactive ion etching (RIE) modes were extensively characterized. Due to the dominance of Frenkel-Poole (FP) emission in the leakage mechanism between Cu lines, we extracted for the first time the effective k through leakage measurements under various ash conditions. We demonstrate that RIE ash is promising to reduce leakage current, to improve dielectric breakdown, and to retain effective k for Cu/ELK applications. Finally, the mechanisms of ELK damages by ICP and RIE ash are explained.