灰工艺对65/45 nm制程Cu/ELK (k=2.5)互连泄漏机理的影响

J.S. Tsai, Y. Su, J.W. Hsu, J.L. Yang, J. Shieh, S. Jang, M. Liang
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引用次数: 7

摘要

本文研究了掺杂碳的CVD超低k材料(ELK, k=2.5)作为金属间介质的Cu damascene结构的泄漏和击穿机制。研究了电感耦合等离子体(ICP)和反应离子刻蚀(RIE)两种处理方式对灰分的影响。由于Frenkel-Poole (FP)发射在Cu线之间的泄漏机制中占主导地位,我们首次通过各种灰条件下的泄漏测量提取了有效k。我们证明RIE灰有希望减少泄漏电流,改善介电击穿,并保留Cu/ELK应用的有效k。最后,分析了ICP和RIE灰对ELK损伤的机理。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of ash process on leakage mechanism of Cu/ELK (k=2.5) interconnect for 65/45 nm generation
This work investigates the leakage and breakdown mechanisms in a Cu damascene structure with carbon-doped CVD extra low-k material (ELK, k=2.5) as intermetal dielectric. The effects of ash processing by inductively coupled plasma (ICP) and reactive ion etching (RIE) modes were extensively characterized. Due to the dominance of Frenkel-Poole (FP) emission in the leakage mechanism between Cu lines, we extracted for the first time the effective k through leakage measurements under various ash conditions. We demonstrate that RIE ash is promising to reduce leakage current, to improve dielectric breakdown, and to retain effective k for Cu/ELK applications. Finally, the mechanisms of ELK damages by ICP and RIE ash are explained.
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