MBBL二极管:一种新型软恢复二极管

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.240350

M. Nemoto, T. Naito, A. Nishiura, K. Ueno

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引用次数: 14

摘要

本文首次研究了一种新型的软恢复二极管——中宽频缓冲层二极管。它在n漂移区中间有一个宽的缓冲层，以降低反向恢复时的电场强度。由于大量剩余的存储电荷，这可以防止快速的反向恢复。优化了中间缓冲层的宽度和施主浓度，以保持足够高的阻断电压。采用软恢复特性还可以改善反向恢复损耗与正向电压降之间的权衡关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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MBBL diode: a novel soft recovery diode

A novel soft recovery diode, called middle broad buffer layer (MBBL) diode, has been investigated for the first time. It has a broad buffer layer in the middle of a N-drift region, in order to reduce the electric field strength during reverse recovery. This prevents a snappy reverse recovery, due to the large amount of remaining stored charges. The width and the donor concentration in the middle buffer layer are optimized to keep a sufficient high blocking voltage. The trade-off relationship between the reverse recovery loss and the forward voltage drops can also be improved by having soft recovery characteristics.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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