一种用于高侧驱动应用的智能功率IC

Euro ASIC '91 Pub Date : 1991-05-27 DOI:10.1109/EUASIC.1991.212900

Y. Droinet

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引用次数: 1

摘要

新技术允许在同一块硅上实现功率MOSFET，双极晶体管和复杂的模拟和数字结构。介绍了一种适用于电流和高压应用的高压侧开关集成电路。该智能电源芯片经过优化，可在汽车环境中驱动电感和电阻负载。该芯片包含故障诊断以检测系统级的任何故障。本文还介绍了用于本设计的新型功率BICMOS技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A smart power IC for high side driver applications

New technologies allow the realization of power MOSFET, bipolar transistors and complex analog and digital structures on the same piece of silicon. A high side switch IC for current and high voltage applications is presented. This smart power chip is optimized to drive inductive and resistive loads in an automotive environment. The chip contains fault diagnostics to detect any failure at system level. This paper also presents the new power BICMOS technology used for this design.<>

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来源期刊

Euro ASIC '91

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0.00%

发文量