Phase noise amplitude distribution as indicator of origin of random phase perturbation in a test oscillator

In this paper, we present an analysis of phase noise distribution. Phase noise, of a designed and realized test oscillator, as a consequence of low frequency (LF) noise up-conversion was simulated. The analysis shows that low frequency noise sources, which are inside the oscillator transistor, give the pure Gaussian distribution of phase noise and LF noise sources located outwith the transistor change this distribution. This behavior could be explained by the influence of the transistor and the transistor's package impedance, which contribute to the signal delay. The microwave test oscillator is designed and realized with AlGaAs/InGaAs HEMTs.