{"title":"一个0.6 v电源带隙参考65nm CMOS","authors":"Omar Abdelfattah, I. Shih, G. Roberts, Y. Shih","doi":"10.1109/NEWCAS.2015.7182023","DOIUrl":null,"url":null,"abstract":"A bandgap voltage reference that operates from a power supply of 0.6 V is presented in this paper. The circuit is based on an all-CMOS implementation that allows operation below the base-emitter voltage limit by eliminating parasitic vertical bipolar-junction-transistors. Low-voltage design techniques are deployed to design an op-amp that can obviate the need for a start-up circuit. The design was implemented in 65 nm CMOS technology. The measured reference voltage is 275 mV with an average temperature coefficient of 176 ppm/°C from -50°C to 80°C without trimming. The circuit consumes 62 μW of power and occupies 0.011 mm2 of chip area.","PeriodicalId":404655,"journal":{"name":"2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 0.6V-supply bandgap reference in 65 nm CMOS\",\"authors\":\"Omar Abdelfattah, I. Shih, G. Roberts, Y. Shih\",\"doi\":\"10.1109/NEWCAS.2015.7182023\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A bandgap voltage reference that operates from a power supply of 0.6 V is presented in this paper. The circuit is based on an all-CMOS implementation that allows operation below the base-emitter voltage limit by eliminating parasitic vertical bipolar-junction-transistors. Low-voltage design techniques are deployed to design an op-amp that can obviate the need for a start-up circuit. The design was implemented in 65 nm CMOS technology. The measured reference voltage is 275 mV with an average temperature coefficient of 176 ppm/°C from -50°C to 80°C without trimming. The circuit consumes 62 μW of power and occupies 0.011 mm2 of chip area.\",\"PeriodicalId\":404655,\"journal\":{\"name\":\"2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS)\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-06-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NEWCAS.2015.7182023\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEWCAS.2015.7182023","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A bandgap voltage reference that operates from a power supply of 0.6 V is presented in this paper. The circuit is based on an all-CMOS implementation that allows operation below the base-emitter voltage limit by eliminating parasitic vertical bipolar-junction-transistors. Low-voltage design techniques are deployed to design an op-amp that can obviate the need for a start-up circuit. The design was implemented in 65 nm CMOS technology. The measured reference voltage is 275 mV with an average temperature coefficient of 176 ppm/°C from -50°C to 80°C without trimming. The circuit consumes 62 μW of power and occupies 0.011 mm2 of chip area.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
