{"title":"采用过中和技术和耦合线MCR匹配方法的c波段功率放大器在0.25-μm GaAs中用于5G通信","authors":"Zhiyang Zhang, Junyan Ren, Shunli Ma","doi":"10.1109/ASICON52560.2021.9620481","DOIUrl":null,"url":null,"abstract":"Wireless communication requires high transmission accuracy. To improve accuracy, high output power amplifier is needed in transmitter. In this paper, a C-band power amplifier with over-neutralization technique and coupled-line based Magnetic-Coupled Resonator (MCR) matching method is implemented in 0.25-μm GaAs technology. With the proposed matching method, the amplifier consumes a chip size of 1.88 mm2 including DC and RF pads, which is small for GaAs technology. Simulation results show the PA achieves 30-dB gain across 5.5-7 GHz with output power of 30-dBm.","PeriodicalId":233584,"journal":{"name":"2021 IEEE 14th International Conference on ASIC (ASICON)","volume":"168 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A C-Band Power Amplifier with Over-Neutralization Technique and Coupled-Line MCR Matching Methods for 5G Communication in 0.25-μm GaAs\",\"authors\":\"Zhiyang Zhang, Junyan Ren, Shunli Ma\",\"doi\":\"10.1109/ASICON52560.2021.9620481\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Wireless communication requires high transmission accuracy. To improve accuracy, high output power amplifier is needed in transmitter. In this paper, a C-band power amplifier with over-neutralization technique and coupled-line based Magnetic-Coupled Resonator (MCR) matching method is implemented in 0.25-μm GaAs technology. With the proposed matching method, the amplifier consumes a chip size of 1.88 mm2 including DC and RF pads, which is small for GaAs technology. Simulation results show the PA achieves 30-dB gain across 5.5-7 GHz with output power of 30-dBm.\",\"PeriodicalId\":233584,\"journal\":{\"name\":\"2021 IEEE 14th International Conference on ASIC (ASICON)\",\"volume\":\"168 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 14th International Conference on ASIC (ASICON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASICON52560.2021.9620481\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 14th International Conference on ASIC (ASICON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASICON52560.2021.9620481","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A C-Band Power Amplifier with Over-Neutralization Technique and Coupled-Line MCR Matching Methods for 5G Communication in 0.25-μm GaAs
Wireless communication requires high transmission accuracy. To improve accuracy, high output power amplifier is needed in transmitter. In this paper, a C-band power amplifier with over-neutralization technique and coupled-line based Magnetic-Coupled Resonator (MCR) matching method is implemented in 0.25-μm GaAs technology. With the proposed matching method, the amplifier consumes a chip size of 1.88 mm2 including DC and RF pads, which is small for GaAs technology. Simulation results show the PA achieves 30-dB gain across 5.5-7 GHz with output power of 30-dBm.
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