高速数字系统的竞争技术

1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1987.1157166

R. Stewart

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引用次数: 0

摘要

一些新技术，包括亚微米CMOS, SOI/ SMOS, BiCMOS GaAs和先进的双极ECL，正在为90年代的超高速ULSI数字系统开发…该小组将讨论是否继续扩大批量CMOS的规模是足够的，或者是否需要转向SOI或GaAs等技术…还将评估比较这些技术的有意义的措施。

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Competing technologies for high-speed digital systems

Several new technologies, including sub-micron CMOS, SOI/ SMOS, BiCMOS GaAs and advanced bipolar ECL, are being developed for the super-fast ULSI digital system of the '90s. . . The panel will discuss whether the continued scaling of bulk CMOS will be adequate or whether a change over to technologies such as SOI or GaAs will be required . . . Meaningful measures for comparing these technologies will also be assessed.

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1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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