用AFM/KFM探针技术表征自对准耦合Si量子点的电子带电态

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-02-06 DOI:10.1109/ISTDM.2014.6874681

K. Makihara, N. Tsunekawa, M. Ikeda, S. Miyazaki

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引用次数: 0

摘要

利用原子力显微镜/开尔文探针显微镜研究了自对准耦合硅量子点的带电态。研究了量子点的空间控制充电特性。结果表明，电子注入后表面电位的时间变化是由于量子点内的电子转移所致。

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Characterization of electronic charged states of self-aligned coupled Si quantum dots by AFM/KFM probe technique

Electronic charged states of self-aligned coupled silicon quantum dots are investigated in this study using atomic force microscopy/Kelvin probe microscopy. Spatially-controlled charging characteristics of the quantum dot are studied. Results show that the temporal change in surface potential after electron injection is due to electron transfer in the quantum dot.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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