{"title":"面向物联网边缘传感系统的低有功功耗和低待机功耗亚阈值ROM","authors":"Jinn-Shyan Wang, Chien-Tung Liu, Chao-Hsiang Wang","doi":"10.1109/VLSI-DAT49148.2020.9196482","DOIUrl":null,"url":null,"abstract":"Key design goals of the sub-threshold ROM for IoT sensing systems are reducing active energy and standby power. A conventional ROM used NAND bit-lines with a source-line scheme to conquer noise issues and a code-inversion scheme to improve performance. This work adopts OAI bit-lines to increase the Ion/Ioff ratio for lowering the Vmin. It reduces energy and power consumption by removing source drivers and code-inversion circuitry. The proposed 256-Kb 90nm OAI-ROM operates at 0.22V and achieves 62% and 70% reduction in active energy and standby power, respectively, compared to the NAND-ROM.","PeriodicalId":235460,"journal":{"name":"2020 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low-Active-Energy and Low-Standby-Power Sub-threshold ROM for IoT Edge Sensing Systems\",\"authors\":\"Jinn-Shyan Wang, Chien-Tung Liu, Chao-Hsiang Wang\",\"doi\":\"10.1109/VLSI-DAT49148.2020.9196482\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Key design goals of the sub-threshold ROM for IoT sensing systems are reducing active energy and standby power. A conventional ROM used NAND bit-lines with a source-line scheme to conquer noise issues and a code-inversion scheme to improve performance. This work adopts OAI bit-lines to increase the Ion/Ioff ratio for lowering the Vmin. It reduces energy and power consumption by removing source drivers and code-inversion circuitry. The proposed 256-Kb 90nm OAI-ROM operates at 0.22V and achieves 62% and 70% reduction in active energy and standby power, respectively, compared to the NAND-ROM.\",\"PeriodicalId\":235460,\"journal\":{\"name\":\"2020 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-DAT49148.2020.9196482\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-DAT49148.2020.9196482","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low-Active-Energy and Low-Standby-Power Sub-threshold ROM for IoT Edge Sensing Systems
Key design goals of the sub-threshold ROM for IoT sensing systems are reducing active energy and standby power. A conventional ROM used NAND bit-lines with a source-line scheme to conquer noise issues and a code-inversion scheme to improve performance. This work adopts OAI bit-lines to increase the Ion/Ioff ratio for lowering the Vmin. It reduces energy and power consumption by removing source drivers and code-inversion circuitry. The proposed 256-Kb 90nm OAI-ROM operates at 0.22V and achieves 62% and 70% reduction in active energy and standby power, respectively, compared to the NAND-ROM.
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