802.11b/g/n双核心组合数字功率放大器,线性输出功率+26.8dBm,采用28nm CMOS

A. Wong, P. Godoy, O. Carnu, Hao Li, Xingliang Zhao, A. Olyaei, A. Ghaffari, S. Tam, R. Winoto, Randy Tsang
{"title":"802.11b/g/n双核心组合数字功率放大器,线性输出功率+26.8dBm,采用28nm CMOS","authors":"A. Wong, P. Godoy, O. Carnu, Hao Li, Xingliang Zhao, A. Olyaei, A. Ghaffari, S. Tam, R. Winoto, Randy Tsang","doi":"10.1109/RFIC.2017.7969050","DOIUrl":null,"url":null,"abstract":"This paper presents a digital power amplifier with two cores that are power combined for a Psat of +32.5dBm. Assisted by an on-chip digital pre-distortion, a transmitted output power of +26.8dBm for 802.11g 54 Mbps 64-QAM is achieved. This is the highest reported linear output power for a digital power amplifier designed for 802.11b/g/n applications in bulk 28nm CMOS. A total area of 0.36mm2 is used for the power amplifier cores and combiner. Drawing off of a 3.3V supply, this power amplifier has a drain efficiency of 21.2% at the maximum linear output power.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A dual core power combining digital power amplifier for 802.11b/g/n with +26.8dBm linear output power in 28nm CMOS\",\"authors\":\"A. Wong, P. Godoy, O. Carnu, Hao Li, Xingliang Zhao, A. Olyaei, A. Ghaffari, S. Tam, R. Winoto, Randy Tsang\",\"doi\":\"10.1109/RFIC.2017.7969050\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a digital power amplifier with two cores that are power combined for a Psat of +32.5dBm. Assisted by an on-chip digital pre-distortion, a transmitted output power of +26.8dBm for 802.11g 54 Mbps 64-QAM is achieved. This is the highest reported linear output power for a digital power amplifier designed for 802.11b/g/n applications in bulk 28nm CMOS. A total area of 0.36mm2 is used for the power amplifier cores and combiner. Drawing off of a 3.3V supply, this power amplifier has a drain efficiency of 21.2% at the maximum linear output power.\",\"PeriodicalId\":349922,\"journal\":{\"name\":\"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2017.7969050\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2017.7969050","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

本文提出了一种双核数字功率放大器,用于+32.5dBm的Psat。在片上数字预失真的辅助下,802.11g 54 Mbps 64-QAM的传输输出功率为+26.8dBm。这是为批量28nm CMOS 802.11b/g/n应用而设计的数字功率放大器的最高线性输出功率。总面积为0.36mm2用于功率放大器核心和组合器。利用3.3V电源,该功率放大器在最大线性输出功率下的漏极效率为21.2%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A dual core power combining digital power amplifier for 802.11b/g/n with +26.8dBm linear output power in 28nm CMOS
This paper presents a digital power amplifier with two cores that are power combined for a Psat of +32.5dBm. Assisted by an on-chip digital pre-distortion, a transmitted output power of +26.8dBm for 802.11g 54 Mbps 64-QAM is achieved. This is the highest reported linear output power for a digital power amplifier designed for 802.11b/g/n applications in bulk 28nm CMOS. A total area of 0.36mm2 is used for the power amplifier cores and combiner. Drawing off of a 3.3V supply, this power amplifier has a drain efficiency of 21.2% at the maximum linear output power.
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