用于微波和高速数字应用的0.2-/spl mu/m 180-GHz-f/sub max/ 6.7 ps- ecl SOI/HRS自对准SEG SiGe HBT/CMOS技术

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) Pub Date : 2000-12-10 DOI:10.1109/IEDM.2000.904424

K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, T. Harada

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引用次数: 76

摘要

在高阻衬底(SOI/HRS)上利用SOI制备了一种0.2-/spl mu/m自取向选择性外延生长(SEG) SiGe异质结双极晶体管(HBT)/CMOS技术。SiGe HBTs具有高频高速性能，f/sub max/为180 GHz, ECL-gate延迟为6.7 ps。

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A 0.2-/spl mu/m 180-GHz-f/sub max/ 6.7-ps-ECL SOI/HRS self aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications

A 0.2-/spl mu/m self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistor (HBT)/CMOS technology with high-quality passive elements, made by using SOI on a high-resistivity substrate (SOI/HRS), was developed. The SiGe HBTs exhibited high-frequency, high-speed capability with f/sub max/ of 180 GHz and a fast ECL-gate delay of 6.7 ps.

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International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)

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