H. Kurata, K. Otsuga, A. Kotabe, Shinya Kajiyama, T. Osabe, Y. Sasago, S. Narumi, K. Tokami, S. Kamohara, O. Tsuchiya
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The Impact of Random Telegraph Signals on the Scaling of Multilevel Flash Memories
This paper describes for the first time the observation of the threshold voltage (Vth) fluctuation due to random telegraph signal (RTS) in flash memory. We acquired large-scale data of Vth fluctuation and confirm the existence of the tail bits generated by RTS. The amount of Vth broadening due to the tail bits becomes larger as the scaling advances, and reaches to more than 0.3 V in 45-nm node. Thus the RTS becomes prominent issue for the design of multilevel flash memory in 45-nm node and beyond
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