65nm SRAM技术的慢写驱动故障:分析和三月测试解决方案

A. Ney, P. Girard, C. Landrault, S. Pravossoudovitch, A. Virazel, M. Bastian
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引用次数: 18

摘要

本文分析了缓慢写入驱动器故障(swdf)的电气根源(van de Goor et al., 2004),这些故障可能会影响65nm技术中的SRAM写入驱动器。这种类型的故障是由于写驱动器控制部分的电阻打开缺陷造成的。当同一个写驱动程序对相反的数据值执行两个连续的写操作时,它涉及一个错误的写操作。在本文的第一部分,我们介绍了SWDF电现象及其对SRAM功能的影响。接下来,我们将展示如何敏化和观察swdf,以及标准March测试如何能够检测这种类型的故障
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Slow Write Driver Faults in 65nm SRAM Technology: Analysis and March Test Solution
This paper presents an analysis of the electrical origins of slow write driver faults (SWDFs) (van de Goor et al., 2004) that may affect SRAM write drivers in 65nm technology. This type of fault is the consequence of resistive-open defects in the control part of the write driver. It involves an erroneous write operation when the same write driver performs two successive write operations with opposite data values. In the first part of the paper, we present the SWDF electrical phenomena and their consequences on the SRAM functioning. Next, we show how SWDFs can be sensitized and observed and how a standard March test is able to detect this type of fault
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