后氮退火对NO氮化栅氧化物p/sup +/聚MOS电容器性能的影响

1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319) Pub Date : 1997-10-13 DOI:10.1109/IRWS.1997.660311

M. K. Mazumder, A. Teramoto, K. Kobayashi, M. Sekine, S. Kawazu, H. Koyama

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引用次数: 1

摘要

只提供摘要形式。研究了湿氧化物在NO环境下两种不同温度下的退火，以及后N/sub /退火对p/sup +/聚MOS电容器性能的影响。结果表明，在900/spl℃温度下，经过N/sub / 2/ post退火处理的样品比没有经过N/sub / 2/ post退火处理的样品泄漏电流和电荷捕获量明显增加。NO退火虽然改善了SiO/sub - 2/-Si界面，但在900/spl℃的N/sub - 2/中退火30分钟后，硼会从p/sup +/晶态扩散到栅极氧化物中，从而降低了p/sup +/晶态Si栅极氧化物的性能。

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Degradation of the characteristics of p/sup +/ poly MOS capacitors with NO nitrided gate oxide due to post nitrogen annealing

Summary form only given. Wet oxides annealed in NO ambient for two different temperatures and degradation due to post N/sub 2/ annealing on the characteristics of p/sup +/ poly MOS capacitors have been investigated. Results show that samples with N/sub 2/ post annealing at 900/spl deg/C have a large increase in leakage current and charge trapping compared with samples without N/sub 2/ post annealing. Although NO annealing improves the SiO/sub 2/-Si interface, post annealing in N/sub 2/ at a high temperature of 900/spl deg/C for 30 minutes may diffuse boron from the p/sup +/ poly to the gate oxide, and hence degrades the characteristics of p/sup +/ poly Si gate oxide.

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来源期刊

1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319)

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