纳米mosfet与金属基SET的混合逆变电路

J. Cheng, J. Jiang, Q. Cai
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引用次数: 0

摘要

本文提出了一种新型的纳米级逆变器。它基于纳米mosfet作为驱动晶体管和金属基SET(单电子晶体管)作为负载。假设纳米mosfet具有固有的硅沟道和金属源/漏。采用一种基于弹道运输的简单方法,可以确定装置的特性。另一方面,基于库仑阻塞效应原理的SET装置可以在金属基座上实现。通过将SET栅极连接到其源,我们可以将其视为普通电阻。仿真结果表明,两个器件配合良好,得到了理想的逆变器特性。然后将这些结果与我们之前提出的另一种形式的逆变器进行比较,并在论文的最后总结这两种电路的优点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Hybrid inverter circuits of nano-MOSFET and metallic-based SET
In this paper, we give a novel choice of nanometer scale inverter. It is based on a nano-MOSFET as a drive transistor and a metallic-based SET (single electron transistor) as a load. The nano-MOSFET is assumed to have intrinsic silicon channel and metal source/drain. Applying a simple method based on ballistic transportation, the device characteristics can be determined. On the other hand, SET, the device operating on the principle of Coulomb blockade effects, can be realized on a metallic base. By connecting the SET gate to its source, we can treat it as a normal resistance. Our simulation proved the two devices cooperated very well and we got the ideal characteristics of this inverter. These results are then compared with another form of inverter that we presented previously, and we conclude the advantages of both circuits at the end of the paper.
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