用于小尺寸应用的薄型MCM-D封装

A. Bet-Shliemoun, M. McGraw, B. Griswold, Chung Ho, S. Westbrook
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引用次数: 0

摘要

MCM-D互连最常被描绘为在支撑基板的一侧沉积的薄膜层。整体封装厚度受限于此支撑结构的厚度。通常,衬底比沉积在其表面的薄膜层厚一个数量级以上。如果可以去除这种基板,就有可能实现更薄的多芯片封装。将介绍一种使用独立铜/聚酰亚胺薄膜的封装技术。这种MCM-D封装的器件附着在薄膜的两侧,不仅实现了良好的硅密度,而且实现了整体的薄封装轮廓。本文将讨论该技术在eiaj标准的14mm × 20mm车身尺寸和2.75 mm厚度上的实现。包装的设计和组装将被强调。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thin-Profile MCM-D Packaging for Small Form Factor Applications
MCM-D interconnect is most often pictured as deposited thin-film layers on one side of a supporting substrate. Overall package thickness is limited by the thickness of this supporting structure. Often the substrate is more than an order of magnitude thicker than the thin-film layers deposited on its surface. If this substrate can be removed, much thinner multichip packages are possible. A packaging technique using free-standing copper/polyimide films will be presented. This MCM-D package has devices attached to both sides of the film to achieve not only good silicon density but an overall thin package profile. This paper will discuss an implementation of this technology for an EIAJ-standard 14mm by 20mm body size with a 2.75 mm thickness. Design and assembly of the package will be highlighted.
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