{"title":"发射电子形成MIM结构Mo-SiO/sub - 2/-Al与一层聚丙烯","authors":"T. Pavel, S. Juriy, G. Serge","doi":"10.1109/IVNC.2005.1619548","DOIUrl":null,"url":null,"abstract":"The structures of metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) are widely applied in various devices of microelectronics. The thin-film structures, subject to process of electrical forming, are widely investigated in connection with an opportunity of their use in flat panel displays as a source of electrons.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Emission of electrons from form MIM structure Mo-SiO/sub 2/-Al with a layer of polypropylene\",\"authors\":\"T. Pavel, S. Juriy, G. Serge\",\"doi\":\"10.1109/IVNC.2005.1619548\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The structures of metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) are widely applied in various devices of microelectronics. The thin-film structures, subject to process of electrical forming, are widely investigated in connection with an opportunity of their use in flat panel displays as a source of electrons.\",\"PeriodicalId\":121164,\"journal\":{\"name\":\"2005 International Vacuum Nanoelectronics Conference\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-07-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 International Vacuum Nanoelectronics Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVNC.2005.1619548\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 International Vacuum Nanoelectronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVNC.2005.1619548","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Emission of electrons from form MIM structure Mo-SiO/sub 2/-Al with a layer of polypropylene
The structures of metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) are widely applied in various devices of microelectronics. The thin-film structures, subject to process of electrical forming, are widely investigated in connection with an opportunity of their use in flat panel displays as a source of electrons.