用于低温电子器件的FDSOI mosfet的电特性和建模

2022 IEEE 15th Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2022-06-06 DOI:10.1109/WOLTE55422.2022.9882859

M. Cassé, B. C. Paz, G. Ghibaudo, M. Vinet

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引用次数: 1

摘要

我们提出了FDSOI晶体管的直流电特性的概述，直到非常低的温度用于低温应用。我们还强调了低温下出现的特殊现象，并讨论了相应的物理和分析模型。

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Electrical characterization and modeling of FDSOI MOSFETs for Cryo-Electronics

We present an overview of DC electrical characterization of FDSOI transistors down to very low temperature for cryogenic applications. We also highlight specific phenomena appearing at low temperature, and discuss the corresponding physical and analytical models.

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来源期刊

2022 IEEE 15th Workshop on Low Temperature Electronics (WOLTE)

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