Taein Shin, Kyungjune Son, Seongguk Kim, Kyungjun Cho, Shinyoung Park, Subin Kim, Gapyeol Park, Boogyo Sim, Joungho Kim
{"title":"神经网络加速器和神经形态芯片中大规模忆阻交叉栅阵列片上互连的影响","authors":"Taein Shin, Kyungjune Son, Seongguk Kim, Kyungjun Cho, Shinyoung Park, Subin Kim, Gapyeol Park, Boogyo Sim, Joungho Kim","doi":"10.1109/EPEPS47316.2019.193227","DOIUrl":null,"url":null,"abstract":"A crossbar array that combines computation and storage functions in non-volatile resistive memory is a promising artificial intelligence (AI) computing architecture. It is because it can largely save a significant energy from interconnection between a processor and a memory. However, the parasitic components from its dense interconnection can affect the electrical performance of noise-sensitive analog-computing and small read voltage margin of the memristor. In this paper, we designed a large-scale memristor crossbar array, and modeled it into equivalent circuit models and analyzed its signal integrity considering IR drop, crosstalk and ripple. These factors were compared depending on the physical dimension of on-chip interconnection and operating frequency. Based on the eye-diagram simulation, we could successfully demonstrate the voltage margin and timing margin for memristor operations.","PeriodicalId":304228,"journal":{"name":"2019 IEEE 28th Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Impact of On-Chip Interconnection in a Large-Scale Memristor Crossbar Array for Neural Network Accelerator and Neuromorphic Chip\",\"authors\":\"Taein Shin, Kyungjune Son, Seongguk Kim, Kyungjun Cho, Shinyoung Park, Subin Kim, Gapyeol Park, Boogyo Sim, Joungho Kim\",\"doi\":\"10.1109/EPEPS47316.2019.193227\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A crossbar array that combines computation and storage functions in non-volatile resistive memory is a promising artificial intelligence (AI) computing architecture. It is because it can largely save a significant energy from interconnection between a processor and a memory. However, the parasitic components from its dense interconnection can affect the electrical performance of noise-sensitive analog-computing and small read voltage margin of the memristor. In this paper, we designed a large-scale memristor crossbar array, and modeled it into equivalent circuit models and analyzed its signal integrity considering IR drop, crosstalk and ripple. These factors were compared depending on the physical dimension of on-chip interconnection and operating frequency. Based on the eye-diagram simulation, we could successfully demonstrate the voltage margin and timing margin for memristor operations.\",\"PeriodicalId\":304228,\"journal\":{\"name\":\"2019 IEEE 28th Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 28th Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EPEPS47316.2019.193227\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 28th Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPEPS47316.2019.193227","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Impact of On-Chip Interconnection in a Large-Scale Memristor Crossbar Array for Neural Network Accelerator and Neuromorphic Chip
A crossbar array that combines computation and storage functions in non-volatile resistive memory is a promising artificial intelligence (AI) computing architecture. It is because it can largely save a significant energy from interconnection between a processor and a memory. However, the parasitic components from its dense interconnection can affect the electrical performance of noise-sensitive analog-computing and small read voltage margin of the memristor. In this paper, we designed a large-scale memristor crossbar array, and modeled it into equivalent circuit models and analyzed its signal integrity considering IR drop, crosstalk and ripple. These factors were compared depending on the physical dimension of on-chip interconnection and operating frequency. Based on the eye-diagram simulation, we could successfully demonstrate the voltage margin and timing margin for memristor operations.