采用氢退火的硅迁移技术克服了最终规模化DRAM的可靠性限制

2017 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2017-12-01 DOI:10.1109/IEDM.2017.8268437

Seong-Wan Ryu, Kyungkyu Min, Jung-Won Shin, Heimi Kwon, Dong-Ho Nam, Tae-Kyung Oh, T. Jang, Min-Soo Yoo, Yong-Taik Kim, Sungjoo Hong

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引用次数: 36

摘要

我们展示了一种高度可靠的埋栅鞍鳍电池晶体管(cell-TR)，采用干蚀刻后氢(H2)退火的硅迁移技术，在完全集成的2y-nm 4Gb DRAM中形成鞍鳍。它清楚地表明，界面陷阱密度降低，可变保留时间(VRT)和row - hammer免疫能力大大增强。

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Overcoming the reliability limitation in the ultimately scaled DRAM using silicon migration technique by hydrogen annealing

We demonstrated a highly reliable buried-gate saddle-fin cell-transistor (cell-TR) using silicon migration technique of hydrogen (H2) annealing after a dry etch to form the saddle-fin in a fully integrated 2y-nm 4Gb DRAM. It clearly shows a reduction in interface trap density with highly enhanced variable-retention-time (VRT) and Row-Hammering immunity.

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2017 IEEE International Electron Devices Meeting (IEDM)

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