新型双向隧道编程/擦除NOR (BiNOR)型闪存EEPROM

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) Pub Date : 1999-06-08 DOI:10.1109/VTSA.1999.786036

E. Yang, Cheng-Jye Liu, T. Chao, M. Liaw, C. Hsu

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引用次数: 0

摘要

提出了一种可靠、高速、低功耗的新型双向通道FN隧道编程/擦除NOR (BiNOR)型闪存单元。利用位线上局域化的浅p阱，BiNOR在nor型阵列架构中实现了低功耗通道FN隧道编程/擦除，这在以前只能在NAND阵列架构中实现。此外，由于指定的浅p阱，三维传导效应大大增强了读电流。

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Novel Bi-directional tunneling program/erase NOR (BiNOR) type flash EEPROM

This paper presents a novel Bi-directional channel FN tunneling program/erase NOR (BiNOR) type flash memory cell for the reliable, high speed, and low power operation. With the localized shallow p-well at bit-line, BiNOR realizes low power channel FN tunneling program/erase in a NOR-type array architecture, which could only be done previously in a NAND array architecture. Furthermore, the read current is enhanced greatly by the 3-D conduction effect due to the designated shallow p-well.

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来源期刊

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)

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