一种具有电势调制沟槽和低掺杂埋层的高速soi - light

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-01 DOI:10.1109/ISPSD.2018.8393668

Shaohong Li, Long Zhang, Jing Zhu, Weifeng Sun, Qingxi Tang, Hao Wang, Ling Sun, Yan Gu, Shikang Cheng, Sen Zhang, Y. Yi

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引用次数: 2

摘要

提出了一种高关断速度、低关断损耗的高压soi灯。所提出的soi - light具有低掺杂埋n层(LBN)区域和与P+发射极短路的发射侧电位调制沟槽(EPMT)。利用LBN和EPMT，由于n漂移区的损耗加快，实现了存储载流子的快速提取和高关断速度。仿真结果表明，在相同电压为1.52V时，与传统的soi - light相比，该soi - light的关断损耗降低了73%。此外，所提出的器件中的孔热流密度分布预示着在高压和大电流条件下坚固性的提高。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A high-speed SOI-LIGBT with electric potential modulation trench and low-doped buried layer

A high-voltage SOI-LIGBT with high turn-off speed and low turn-off loss (EOFF) is proposed in this paper. The proposed SOI-LIGBT features a Low-doped Buried N-layer (LBN) region and an emitter-side Electric Potential Modulation Trench (EPMT) shorted with the P+ emitter. By employing the LBN and EPMT, fast extraction of the stored carrier and the high turn-off speed are realized due to the accelerated depletion of N-drift region. The simulated results show that the proposed SOI-LIGBT can achieve a 73% lower turn-off loss compared with the conventional SOI-LIGBT at the same VON of 1.52V. Moreover, the hole heat flux distribution in the proposed device predicts an improvement of ruggedness under high-voltage and high-current conditions.

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来源期刊

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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